Beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films during transmission electron microscopy

摘要

We report that an electron beam focused for high-resolution imaging rapidly initiates observable crystallization of amorphous Me-Si-C films. For 200-keV electron irradiation of Nb-Si-C and Zr-Si-C films, crystallization is observed at doses of similar to 2.8 x 10(9) and similar to 4.7 x 10(9) e(-)/nm(2), respectively. The crystallization process is driven by atomic displacement events, rather than heating from the electron beam as in situ annealing (400-600 degrees C) retains the amorphous state. Our findings demand a critical analysis of alleged amorphous and nanocrystalline ceramics including reassessing previous reports on nanocrystalline Me-Si-C films for possible electron-beam-induced crystallization effects.